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See Weaver Resume for complete list

Swaminathan, P., V.N. Antonov, J.A.N.T. Soares, J.S. Palmer, and J.H. Weaver, "Cd-based II-VI Semiconductor Nanostructures Produced by Buffer Layer Assisted Growth: Structural Evolution and Photoluminescence," Phys. Rev. B 73 (2006): 125430.

Trenhaile, B.R., V.N. Antonov, G.J. Xu, A. Agrawal, A.W. Signor, R. Butera, K.S. Nakayama, and J.H. Weaver, "Phonon-Activated, Electron-Stimulated Desorption of Halogens from Si(100)-(2x1)," Phys. Rev. B 73 (2006): 125318.

Antonov, V.N., P. Swaminathan, J.A.N.T. Soares, J.S. Palmer, and J.H. Weaver, "Photoluminescence of CdSe Quantum Dots and Rods from Buffer-Layer-Assisted Growth," Appl. Phys. Lett. 88, (2006): 121906.

Nakayama, K.S., M.M.G. Alemany, H. Kwak, T. Sugano, K. Ohmori, J.R. Chelikowsky, and J.H. Weaver, “Electronic Structure of Si(001)-c(4x2) Analyzed by Scanning Tunneling Spectroscopy and ab initio Simulations,” Phys. Rev. B 73 (2006): 035330.

Nakayama, K.S., T. Sugano, K. Ohmori, A.W. Signor, and J.H. Weaver, “Chemical Fingerprinting at the Atomic Level with Scanning Tunneling Spectroscopy,” Surf. Sci. 600 (2006): 716-23.

Waggoner, P.S., J.S. Palmer, V.N. Antonov, and J.H. Weaver, “Metal Nanostructure Growth on Buffer Layers of Molecular CO2,” Surf. Sci. 596 (2005): 12-20.

Palmer, J.S., V.N. Antonov, A.S. Bhatti, P. Swaminathan, P.S. Waggoner, and J.H. Weaver, "The Effects of Buffer Structure on Buffer-Layer-Assisted Growth: Grain Boundaries, Grooves and Pattern Transfer," Surf. Sci. 595 (2005): 64-72.

Trenhaile, B.R., V.N. Antonov, G.J. Xu, K.S. Nakayama, and J.H. Weaver, “Electron Stimulated Desorption from a Surprising Source: Internal Hot Electrons for Br-Si(100)-(2x1),” Surf. Sci. Lett. 583/1, L135-L141, accompanied by Perspective by R.J. Hamers, “Bond-breaking at Surfaces: Electrons or Phonons?” See also Physics Update “A New Mode for Desorption,” Physics Today 58, no. 9 (2005): 9; Editor’s Choice, “Not-So-Thermal Desorption,” Science 308 (2005): 604; News of the Week, “Surface Bonding Reconsidered,” C&E News 83 (2005): 7; and Chemical Highlights of 2005, C&E News 83 (2005): 20.

Antonov, V.N., J.S. Palmer, P.S. Waggoner, A.S. Bhatti, and J.H. Weaver, "Nanoparticle diffusion on desorbing solids: The role of elementary excitations in buffer-layer-assisted growth," Phys. Rev. B 70 (2004): 45406.

Weaver, J.H., and V.N. Antonov, "Synthesis and patterning of nanostructures of (almost) anything on anything," Surface Science 557 (2004): 1. See also C&E News May 3, 2004 http://pubs.acs.org/cen/news/8218/8218notw1.html.

Xu, G.J., S.V. Khare, Koji S. Nakayama, C.M. Aldao, and J.H. Weaver, "Step free energies, surface stress, and adsorbate interactions for Cl-Si(100) at 700 K," Physical Review B 68 (2003): 235318.

Antonov, V.N., J.S. Palmer, A.S.Bhatti, and J.H. Weaver, "Nanostructure diffusion and aggregation on desorbing rare gas solids: Slip on an incommensurate lattice," Phys. Rev. B 68 (2003): 205418.

Xu, G.J., E. Graugnard, B.R. Trenhaile, K.S. Nakayama, and J.H. Weaver, "Atom vacancy lines and surface patterning: The role of stress for Br-Si(100)-(2x1) at 700 K," Phys. Rev. B 68 (2003): 75301.

Xu, G.J., E. Graugnard, V. Petrova, K.S. Nakayama, and J.H. Weaver, "Dynamic roughening of Cl-terminated Si(100)-(2x1) at 700 K," Phys. Rev. B 67 (2003): 125320.

Xu, G.J., K.S. Nakayama, B.R. Trenhaile, C.M. Aldao, and J.H. Weaver, "Equilibrium morphologies for Cl-roughened Si(100) at 700 K: Dependence on Cl concentration," Phys. Rev. B 67 (2003): 125321.

Haley, C., and J.H. Weaver, "Buffer-layer-assisted nanostructure growth via two dimensional cluster-cluster aggregation," Surf. Sci. 518 (2002): 243.

Nakayama, K.S., E. Graugnard, and J.H. Weaver, "Tunneling electron induced Br hopping on Si(100)-(2x1)," Phys. Rev. Lett. 89 (2002): 266106.

Nakayama, K.S., E. Graugnard, and J.H. Weaver, "Surface modification without desorption: Recycling of Cl on Si(100)-2x1," Phys. Rev. Lett. 88 (2002): 125508. See also C&E News 80 (March 25, 2002): 38.

Aldao, C.M., and J.H. Weaver, "Halogen etching of Si via atomic-scale processes," Progress in Surface Science 68 (2001): 189.

Evans, M.M.R., B.Y. Han, and J.H. Weaver, "Ag films on GaAs(110): Dewetting and void growth," Surf. Sci. 465 (2000): 90.

Nakayama, K., C.M. Aldao, and J.H. Weaver, "Vacancy-assisted halogen etching Si(100)-2x1," Phys. Rev. Lett. 82 (1999): 568.

Chey, S.J., L. Huang, and J.H. Weaver, "Self-assembly of multilayer arrays from Ag nanoclusters delivered to Ag(111) by soft landing," Surf. Sci. Lett. 419 (1999): L100.

Nakayama, K., and J.H. Weaver, "Electron-stimulated modification of Si Surfaces," Phys. Rev. Lett. 82 (1999): 980.

Chey, S.J., L. Huang, and J.H. Weaver, "Interface bonding and manipulation of Ag and Cu nanocrystals on Si(111)-(7x7)-based surfaces," Phys. Rev. B 59 (1999): 16033.

Boland, J.J., and J.H. Weaver, "A surface view of etching," Physics Today 51 (1998): 34.

Huang, L., S.J. Chey, and J.H. Weaver, "Buffer-layer-assisted growth of nanocrystals: Ag-Xe-Si(111)," Phys. Rev. Lett. 80 (1998): 4095.

Chey, S.J., L. Huang, and J.H. Weaver, "Manipulation and writing with Ag nanocrystals on Si(111)-7x7," Appl. Phys. Lett. 21 (1998): 2698.

Han, B.Y., C.Y. Cha, and J.H. Weaver, "Layer-by-layer etching of GaAs(110) with halogenation and pulsed-laser irradiation," J. Vac. Sci. Technol. A 16 (1998): 490.

Cha, C.Y., J. Brake, B.Y.Han, D.W. Owens, and J.H. Weaver, "Surface morphologies associated with thermal desorption: Scanning tunneling microscopy studies of Br-GaAs(110)," J. Vac. Sci. Technol. B 15 (1997): 605.

Poirier, D.M., and J.H. Weaver, "Solid state properties of fullerenes and fullerene-based materials," Chapter 1 in Fullerene Fundamentals, Solid State Physics 48, eds. H. Ehrenreich and F. Spaepen, Academic Press, Cambridge, 1994.