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University of Illinois (1988-present)

M. Pinarbasi, N. Maley, A. Myers and J. R. Abelson, "Hydrogenated Amorphous Silicon Deposited by Reactive Sputtering - the Electronic Properties, Hydrogen Bonding and Microstructure," Thin Solid Films 171, (1989): 217-33.

G. Feng, M. Katiyar, N. Maley and J. R. Abelson, "Silicon Epitaxy at 230¡C by Reactive dc Magnetron Sputtering and its In Situ Ellipsometry Modeling," Appl. Phys. Lett. 59, no. 3, (1991): 330-32.

A. M. Myers, J. R. Doyle, G. J. Feng, N. Maley, D. N. Ruzic, and J. R. Abelson, "Energetic Particle Fluxes in Magnetron Sputter Deposition of a-Si:H," J. Non-Crystalline Solids 137/8, (1991): 783-86.

G. Feng, M. Katiyar, J. R. Abelson, and N. Maley, "Dielectric functions and electronic band states of a-Si and a-Si:H," Phys. Rev. B45, no. 16, (1992): 9103-07.

J. R. Abelson, "Plasma Deposition of Hydrogenated Amorphous Silicon: Studies of the Growth Surface," Applied Physics A56, (1993): 493-512. Invited review article.

A. Nuruddin, J. R. Doyle and J. R. Abelson, "Macro-Trench Studies of Step Coverage in a-Si:H Film Growth," J. Appl. Phys. 76, no. 5, (1994): 3123-29.

J. R. Abelson, L. Mandrell and J. R. Doyle, "Hydrogen Release Kinetics from the a-Si:H Surface During Reactive Magnetron Sputter Deposition: an Isotope Labelling Study," J. Appl. Phys. 76, no. 3, (1994): 1856-70.

I. Petrov, A. Myers, J. E. Greene and J. R. Abelson, "Mass and Energy Resolved Detection of Ions and Neutral Species Incident at the Substrate During Reactive Magnetron Sputtering of Ti in Mixed Ar + N2 Mixtures," J. Vac. Sci. Tech. A12, no. 5, (1994): 2846-54.

Y. H. Liang, N. Maley and J. R. Abelson, "Improved Stability of Hydrogenated Amorphous Silicon Films Grown by Reactive Magnetron Sputtering at High Substrate Temperature," J. Appl. Phys. 75, no. 7, (1994): 3704-06.

D. G. Cahill, M. Katiyar and J. R. Abelson, "Thermal Conductivity of a-Si:H Thin Films," Phys. Rev. B50, no. 9, (1994): 6077-81.

Y. H. Yang, M. Katiyar, N. Maley, and J. R. Abelson, "Sub-surface a-Si:H to µc-Si:H Transformation During Magnetron Sputter Deposition Determined by Spectroscopic Ellipsometry," Appl. Phys. Lett. 65, no. 14, (1994): 1769-71.

M. Katiyar and J.R. Abelson, "Methods to Enhance Absorption Signals in IR Reflectance Spectroscopy: A Comparison of Methods," J. Vac. Sci. Tech. A13, no. 4, (1995): 2005-12.

M. Katiyar, Y. H. Yang, and J.R. Abelson, "Hydrogen Surface Reactions During a-Si:H Growth by Reactive Magnetron Sputtering: a Real-Time Kinetic Study by In-situ IR Absorption," J. Appl. Phys. 77, no. 12, (1995): 6247-56.

Y. H. Yang and J. R. Abelson, "Spectroscopic Ellipsometry of Thin Films on Transparent Substrates: A Formalism for Data Interpretation," J. Vac. Sci. Tech. A13, no. 3, (1995): 1145-49.

Y. H. Yang and J. R. Abelson, "Deposition of px-Si at 470¡C by Magnetron Sputtering onto a µc-hydrogenated Silicon Seed Layer," Appl. Phys. Lett. 67, no. 24, (1995): 3623-25.

A. von Keudell and J. R. Abelson, "Evidence for Atomic Hydrogen Insertion into Strained Si-Si Bonds in the a-Si:H Sub-surface From in-situ IR Spectroscopy," Appl. Phys. Lett. 71, no. 26, (1997): 3832-33.

A. Nuruddin and J. R. Abelson, "Does a Dipole Layer at the p-i Interface Reduce the Built-in Voltage of Amorphous Silicon p-i-n Solar Cells?" Appl. Phys. Lett. 71, no. 19, (1997): 2797-99.

C. S. McCormick, C. E. Weber, J. R. Abelson, and S. M. Gates, "An Amorphous Silicon Thin Film Transistor Fabricated at 125¡C by DC Reactive Magnetron Sputtering," Appl. Phys. Lett. 70, no. 2, (1997): 226-27.

A. von Keudell and J. R. Abelson, "The Interaction of Atomic Hydrogen with Very Thin Amorphous Hydrogenated Silicon Films Analyzed Using in situ Real Time Infrared Spectroscopy: Reaction Rates and the Formation of Hydrogen Platelets," J. Appl. Phys. 84, no. 1, (1998): 489.

C. Weber and J. R. Abelson, "Amorphous Silicon Buried Channel Thin Film Transistors," IEEE Trans. on Electron Devices 45, no. 2, (1998): 447-52.

A. von Keudell and J. R. Abelson, "Direct Insertion of SiH3 Radicals into Strained Si-Si Surface Bonds During Plasma Deposition of Hydrogenated Amorphous Silicon Films," Phys. Rev. B59, no. 8, (1998): 5791-8.

J. M. Gibson, M. M. J. Treacy, P. M. Voyles, H.-C. Jin and J. R. Abelson, "Structural Disorder Induced in Hydrogenated Amorphous Silicon by Light-Soaking," Appl. Phys. Lett. 73, no. 21, (1998): 3093-5.

D. Kwon, H. Lee, J. D. Cohen, H. C. Jin, and J. R. Abelson, "Optical Spectra of Crystalline Silicon Particles Embedded in an Amorphous Silicon Matrix," J. Non-Cryst. Solids (1998): 227-230, 1040-44 .

Y. Lubianiker, J. D. Cohen, H.-C. Jin and J. R. Abelson, "The Effect of Embedded Microcrystallites on the Light-Induced Degradation of Hydrogenated Amorphous Silicon," Phys. Rev. B60, no. 7, (1999): 4434 .

D. Kwon, C.-C. Chen, J. D. Cohen, H.-C. Jin, E. Hollar, I. K. Robertson, and J. R. Abelson, "Electronic Transitions Associated with Small Crystalline Silicon Inclusions within an Amorphous Silicon Host," Phys. Rev. B60, no. 7, (1999): 4442.

K.-M. Yu, W. Walukiewicz, S. Muto. H.-C. Jin and J. R. Abelson, "The Effects of X-ray Induced Structural Changes on the Microstructure of a-Si After Thermal Crystallization," Appl. Phys. Lett. 75, no. 14, (1999): 2032.

J. E. Gerbi and J. R. Abelson, "The Deposition of Microcrystalline Silicon: Direct Evidence for Hydrogen-Induced Surface Mobility of Si Adspecies," J. Appl. Phys. 89, no. 2, (2000): 1463.

M. K. Erhardt, H.-C. Jin, J. R. Abelson, and R. G. Nuzzo, "Low Temperature Fabrication of Si Thin Film Transistor Microstructures by Soft Lithographic Patterning on Curved and Planar Substrates," Chemistry of Materials 12, no. 11, (2000): 3306-15.

A. Nuruddin and J. R. Abelson, "Improved Transparent Conductive Oxide / p+ / i Junction in Amorphous Silicon Solar Cells by Tailored Hydrogen Flux During Growth," Thin Solid Films 394, no. 1-2, (2001): 48-62.

P. M. Voyles, J. E. Gerbi, M. M. J. Treacy, J. M. Gibson and J. R. Abelson, "Absence of an Abrupt Phase Change in Silicon with Deposition Temperature," Phys. Rev. Lett. 86, no. 24, (2001): 5514-17.

M. Katiyar and J. R. Abelson, "Investigation of Hydrogen Plasma Induced Phase Transition From a-Si:H to µc-Si:H Using Real Time Infrared Spectroscopy," Mat. Sci. & Eng. A (2001): 304-306, 349-52 .

J. E. Gerbi, P. M. Voyles, M. M. J. Treacy, J. M. Gibson, W. Chen, B. J. Heuser, and J. R. Abelson, "Control of Medium Range Order in Amorphous Silicon via Ion and Neutral Bombardment During Growth," MRS Proc. (2001): 664, A27.3.1.

J. H. Sung, D. M. Goedde, G. S. Girolami, and J. R. Abelson, "Remote Plasma CVD of Conformal ZrB2 Films at Low Temperature: A Promising Diffusion Barrier for ULSI Electronics," J. Appl. Phys. 91, no. 6, (2002): 3904.

P. M. Voyles and J. R. Abelson, "Medium-Range Order in Amorphous Silicon Measured by Fluctuation Electron Microscopy," Solar Energy Materials (2003). Invited review article.

H.-C. Jin, J. R. Abelson, M. K. Erhardt, and R. G. Nuzzo, "Fabrication of a-Si:H Photoconductive Image Sensor Arrays on Curved Substrates Using Soft Lithography," J. Vac. Sci. Tech. B 22:5, (2004): 2548-2551 .

S. V. Khare, S. M. Nakhmanson, P. M. Voyles, P. Keblinski and J. R. Abelson, "Evidence from atomistic simulations of fluctuation electron microscopy for preferred local orientations in amorphous silicon," Appl. Phys. Lett. 85, (2004): 745.

B. A. Sperling and J. R. Abelson, "Simultaneous short-range smoothening and global roughening during growth of hydrogenated amorphous silicon films," Appl. Phys. Lett. 85:16, (2004): 3456-3458.

B. A. Sperling and J. R. Abelson, "Comment on "Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films" [J. Appl. Phys. 90, (2001): 1067] Journal of Applied Physics, 95, no. 5, (2004): 2936.

Complete Publications [pdf]