ECE 444
ECE 444 - IC Device Theory & Fabrication
Spring 2024
| Title | Rubric | Section | CRN | Type | Hours | Times | Days | Location | Instructor |
|---|---|---|---|---|---|---|---|---|---|
| IC Device Theory & Fabrication | ECE444 | AB1 | 33902 | LAB | 0 | 0900 - 1150 | T | ARR Micro & Nanotechnology Lab | |
| IC Device Theory & Fabrication | ECE444 | AB2 | 33903 | LAB | 0 | 1400 - 1650 | T | ARR Micro & Nanotechnology Lab | Isaac Mark Wolstenholme |
| IC Device Theory & Fabrication | ECE444 | AB3 | 33904 | LAB | 0 | 0900 - 1150 | R | ARR Micro & Nanotechnology Lab | Steven Kolaczkowski |
| IC Device Theory & Fabrication | ECE444 | AB4 | 33905 | LAB | 0 | 1400 - 1650 | R | ARR Micro & Nanotechnology Lab | Brendan F Wolan |
| IC Device Theory & Fabrication | ECE444 | AB5 | 33906 | LAB | 0 | 1400 - 1650 | M | ARR Micro & Nanotechnology Lab | Hanwei Wang |
| IC Device Theory & Fabrication | ECE444 | AB6 | 33907 | LAB | 0 | 1400 - 1650 | W | ARR Micro & Nanotechnology Lab | Ishan Venugopalapura Ramaiah |
| IC Device Theory & Fabrication | ECE444 | AB7 | 33908 | LAB | 0 | 1400 - 1650 | F | ARR Micro & Nanotechnology Lab | Isaac Mark Wolstenholme |
| IC Device Theory & Fabrication | ECE444 | AD1 | 33900 | DIS | 4 | 0900 - 0950 | M W F | 2013 Electrical & Computer Eng Bldg | Paul J Froeter |
| IC Device Theory & Fabrication | ECE444 | AD2 | 33901 | DIS | 4 | 1000 - 1050 | M W F | 2013 Electrical & Computer Eng Bldg | Hyunseok Kim |
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Official Description
Fabrication lab emphasizing physical theory and design of devices suitable for integrated circuitry; electrical properties of semiconductors and techniques (epitaxial growth, oxidation, photolithography diffusion, ion implantation, metallization, and characterization) for fabricating integrated circuit devices such as p-n junction diodes, bipolar transistors, and field effect transistors. Course Information: 4 undergraduate hours. 4 graduate hours. Prerequisite: ECE 340.
Subject Area
- Electronic Materials